 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors Features: D Built-In Bias Resistor (R1 = 10k, R2 = 10k) D Small-Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +160C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO ICEO Emitter Cutoff Current DC Current Gain Gain Band-width Product NTE2355 NTE2356 Output Capacitance NTE2355 NTE2356 Cob VCB = 10V, f = 1MHz - - 3.7 5.5 - - pF pF IEBO hFE fT Test Conditions VCB = 40V, IE = 0 VCE = 40V, IB = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10mA VCE = 10V, IC = 5mA - - 250 200 - - MHz MHz Min - - 170 50 Typ - - 250 - Max 0.1 0.5 330 - Unit A A A Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Input OFF Voltage Input ON Voltage Input Resistance Input Resistance Ratio Symbol VCE(sat) Test Conditions IC = 10mA, IB = 0.5mA Min - 50 50 0.8 1.0 7.0 0.9 Typ 0.1 - - 1.1 2.0 10.0 1.0 Max 0.3 - - 1.5 4.0 13.0 1.1 Unit V V V V V k V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 100A, RBE = VI(off) VI(on) R1 R1/R2 VCE = 5V, IC = 100A VCE = 200mV, IC = 10mA Schematic Diagram Collector (Output) Collector (Output) R1 Base (Input) R2 Base (Input) R1 R2 Emitter (GND) Emitter (GND) NPN .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max PNP ECB .050 (1.27) .050 (1.27) .035 (0.9) .102 (2.6) Max |
Price & Availability of NTE2356
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |